SIO2 THIN-FILM DEPOSITION BY EXCIMER LASER ABLATION FROM SIO TARGET IN OXYGEN ATMOSPHERE

被引：40

作者：

FOGARASSY, E

FUCHS, C

SLAOUI, A

STOQUERT, JP

机构：

[1] Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n 292), 67037 Strasbourg Cedex, 23, rue du Loess

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 07期

关键词：

D O I：

10.1063/1.104253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon dioxide thin films are deposited, for the first time, by reactive laser ablation from a silicon monoxide target in oxygen atmosphere, with a high-power pulsed ArF (λ=193 nm) excimer laser. The specific influence of oxygen in the chamber during the laser processing on the stoichiometry and final properties of the oxide films deposited at ambient temperature is demonstrated.

引用

页码：664 / 666

页数：3

共 14 条

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