INTERFACE STATE BUILDUP BY HIGH-FIELD STRESSING IN VARIOUS METAL-OXIDE-SEMICONDUCTOR INSULATORS USING DEEP-LEVEL TRANSIENT SPECTROSCOPY

被引：7

作者：

BELKOUCH, S ^{[1
]}

JEAN, C ^{[1
]}

AKTIK, C ^{[1
]}

AMEZIANE, EL ^{[1
]}

机构：

[1] UNIV SHERBROOKE,DEPT ELECT ENGN,SHERBROOKE,PQ J1K 2R1,CANADA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 04期

关键词：

D O I：

10.1063/1.115178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The buildup of interface states with high field (HF) stressing have been observed in thermally grown oxide, N2O nitrided oxide (NO), and reoxided nitrided oxide (RNO). The DLTS technique was used to analyze the electronic properties of the Si/SiO2 interface. We show that N2O nitridation of SiO2 changes the electronic distribution of states at the Si/SiO2 interface after HF electrical stress. Our results indicate that this nitrogen plays an important role in preventing the creation of a center at E(t1)=0.34 eV below the bottom of the conduction band. However, the nitrogen is responsible for a new level at E(t2)=0.22 eV below the bottom of the conduction band after the NO device is stressed. Also, reoxidation and increasing time of the reoxidation shift the maximum of the peak level away from the E(t2) toward E(t1). (C) 1995 American Institute of Physics.

引用

页码：530 / 532

页数：3