IMPROVED PERFORMANCE OF GAAS MICROWAVE FIELD-EFFECT TRANSISTORS WITH LOW INDUCTANCE VIA-CONNECTIONS THROUGH SUBSTRATE

被引：20

作者：

DASARO, LA

DILORENZO, JV

FUKUI, H

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1978.19255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1218 / 1221

页数：4

共 7 条

[1] DEAN RH, 1975, ECOM7301622, P45
[2] DEANGELO MA, 1969, Patent No. 3485665
[3] GAAS MICROWAVE-POWER FET
FUKUTA, M
SUYAMA, K
SUZUKI, H
ISHIKAWA, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) : 388 - 394
[4] CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS
HOWER, PL
BECHTEL, NG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 213 - 220
[5] KOHN E, 1975, THESIS TH AACHEN, P64
[6] NIEHAUS WC, 1977, GALLIUM ARSENIDE REL, P271
[7] Okinaka Y, 1970, PLATING, V57, P914