GAAS MICROWAVE-POWER FET

被引：31

作者：

FUKUTA, M ^{[1
]}

SUYAMA, K ^{[1
]}

SUZUKI, H ^{[1
]}

ISHIKAWA, H ^{[1
]}

机构：

[1] FUJITSU LABS LTD,SEMICOND LAB,NAKAHARA KU,KAWASAKI,JAPAN

来源：

关键词：

D O I：

10.1109/T-ED.1976.18416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：388 / 394

页数：7

共 14 条

[1] BLOCKER TG, 1974, IEEE INT ELECTRON DE, P288
[2] CAMISA RL, 1975, ISSCC DIG TECH PAPER, P70
[3] CHEN JTC, 1974, IEEE INT ELECTRON DE, P299
[4] DRIVER MC, 1973, IEEE INT ELECTRON DE, P393
[5] FUKUTA M, 1973, ISSCC DIG TECH PAPER, P84
[6] FUKUTA M, 1974, IEEE INT ELECTRON DE, P285
[7] CHARACTERIZATION OF NONLINEARITIES IN MICROWAVE DEVICES AND SYSTEMS
HEITER, GL
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (12) : 797 - 805
[8] VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS IN A NITROGEN ATMOSPHERE
IHARA, M
DAZAI, K
RYUZAN, O
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 528 - 531
[9] DESIGN AND PERFORMANCE OF MICROWAVE AMPLIFIERS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
LIECHTI, CA
TILLMAN, RL
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, MT22 (05) : 510 - 517
[10] NAPOLI L, 1973, IEEE INT MICROWAVE S, P230