DESIGN AND PERFORMANCE OF MICROWAVE AMPLIFIERS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS

被引：41

作者：

LIECHTI, CA ^{[1
]}

TILLMAN, RL ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304

来源：

关键词：

D O I：

10.1109/TMTT.1974.1128271

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：510 / 517

页数：8

共 13 条

[1] ARNOLD S, 1972, IEEE INT MICROWAVE S, P233
[2] Q BAND GAAS FET AMPLIFIER AND OSCILLATOR
BAECHTOL.W
[J]. ELECTRONICS LETTERS, 1971, 7 (10) : 275 - &
[3] SI AND GAAS 0.5 MUM-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
BAECHTOLD, W
DAETWYLE.K
FORSTER, T
MOHR, TO
WALTER, W
WOLF, P
[J]. ELECTRONICS LETTERS, 1973, 9 (10) : 232 - 234
[4] BAECHTOLD W, 1973, IEEE J SOLID STATE C, VSC 8, P54
[5] Bechtel N. G., 1972, Microwave Journal, V15
[6] BEHLE AF, 1972, IEEE T ELECTRON DEVI, VED19, P993
[7] BESSER L, 1972, IEEE INT MICROWAVE S, P230
[8] CLOUSER PL, 1970, IEEE INT SOLID STATE, P52
[9] FUKUI H, 1966, IEEE T CIRCUIT THEOR, VCT 3, P137
[10] LIECHTI CA, 1973, ISSCC DIG TECH PAPER, P74