SMALL-ANGLE SCATTERING OF X-RAYS BY NEUTRON-IRRADIATED GERMANIUM

[1] USE OF ANOMALOUS X-RAY TRANSMISSION FOR DETECTION OF DEFECTS PRODUCED IN SILICON AND GERMANIUM BY FAST NEUTRON IRRADIATION [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4391 - &

[2] BEEMAN WW, 1957, HANDBUCH PHYSIK, V32, P362

[3] OBSERVATION OF DAMAGE REGIONS IN N-TYPE GERMANIUM BY MEANS OF A CHEMICAL ETCH [J]. NUOVO CIMENTO, 1963, 29 (05): : 1200 - +

[4] Brinkman JA, 1956, AM J PHYS, V24, P246, DOI [10.1119/1.1934201, DOI 10.1119/1.1934201]

[5] ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1258 - 1268

[6] CHANG R, 1957, J APPL PHYS, V28, P384

[7] CORBETT JW, 1966, SOLID STATE PHYSI S7

[8] CRAWFORD JH, 1959, J APPL PHYS, V30, P1204, DOI 10.1063/1.1735294

[9] DENOUDEN G, UNPUBLISHED

[10] DIAMOND S, UNPULBISHED

[1] USE OF ANOMALOUS X-RAY TRANSMISSION FOR DETECTION OF DEFECTS PRODUCED IN SILICON AND GERMANIUM BY FAST NEUTRON IRRADIATION [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4391 - &

[2] BEEMAN WW, 1957, HANDBUCH PHYSIK, V32, P362

[3] OBSERVATION OF DAMAGE REGIONS IN N-TYPE GERMANIUM BY MEANS OF A CHEMICAL ETCH [J]. NUOVO CIMENTO, 1963, 29 (05): : 1200 - +

[4] Brinkman JA, 1956, AM J PHYS, V24, P246, DOI [10.1119/1.1934201, DOI 10.1119/1.1934201]

[5] ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1258 - 1268

[6] CHANG R, 1957, J APPL PHYS, V28, P384

[7] CORBETT JW, 1966, SOLID STATE PHYSI S7

[8] CRAWFORD JH, 1959, J APPL PHYS, V30, P1204, DOI 10.1063/1.1735294

[9] DENOUDEN G, UNPUBLISHED

[10] DIAMOND S, UNPULBISHED