THE FORMATION OF THE GADOLINIUM-SI(111)7X7 INTERFACE - REACTIVITY AT ROOM-TEMPERATURE

被引：22

作者：

HENLE, WA

NETZER, FP

CIMINO, R

BRAUN, W

机构：

[1] MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER

[2] BESSY GMBH,D-1000 BERLIN 33,FED REP GER

来源：

SURFACE SCIENCE | 1989年 / 221卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(89)90571-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：131 / 143

页数：13

共 46 条

[11] SAMARIUM CHEMISORPTION ON GROUP-IV SEMICONDUCTORS [J].

FRANCIOSI, A ;

PERFETTI, P ;

KATNANI, AD ;

WEAVER, JH ;

MARGARITONDO, G .

PHYSICAL REVIEW B, 1984, 29 (10) :5611-5616

[12] SAMARIUM VALENCE CHANGES AND REACTIVE INTERDIFFUSION AT THE SI(LLL)-SM INTERFACE [J].

FRANCIOSI, A ;

WEAVER, JH ;

PERFETTI, P ;

KATNANI, AD ;

MARGARITONDO, G .

SOLID STATE COMMUNICATIONS, 1983, 47 (06) :427-430

[13] RARE-EARTH-METAL SEMICONDUCTOR INTERFACIAL REACTIONS - THERMODYNAMIC ASPECTS [J].

FUJIMORI, A ;

GRIONI, M ;

WEAVER, JH .

PHYSICAL REVIEW B, 1986, 33 (02) :726-735

[14] 4F PHOTOEMISSION FROM CE CLUSTERS AND DISORDERED REACTION-PRODUCTS AT CE/SI AND CE/GAAS INTERFACES [J].

FUJIMORI, A ;

GRIONI, M ;

JOYCE, JJ ;

WEAVER, JH .

PHYSICAL REVIEW B, 1985, 31 (12) :8291-8294

[15] CLUSTER-INDUCED REACTIONS AT A METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111) [J].

GRIONI, M ;

JOYCE, J ;

CHAMBERS, SA ;

ONEILL, DG ;

DELGIUDICE, M ;

WEAVER, JH .

PHYSICAL REVIEW LETTERS, 1984, 53 (24) :2331-2334

[16] ADATOM AGGREGATION, REACTION, AND CHEMICAL TRAPPING AT THE SM/GAAS(110) INTERFACE [J].

GRIONI, M ;

JOYCE, JJ ;

WEAVER, JH .

PHYSICAL REVIEW B, 1985, 32 (02) :962-968

[17] MODELING A HETEROGENEOUS METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111) [J].

GRIONI, M ;

JOYCE, J ;

DELGIUDICE, M ;

ONEILL, DG ;

WEAVER, JH .

PHYSICAL REVIEW B, 1984, 30 (12) :7370-7373

[18] METAL-ANION BOND STRENGTH AND ROOM-TEMPERATURE DIFFUSION AT METAL/GAAS INTERFACES - TRANSITION VERSUS RARE-EARTH VERSUS AU METAL OVERLAYERS [J].

GRIONI, M ;

JOYCE, JJ ;

WEAVER, JH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1986, 4 (03) :965-968

[19]

HENLE WA, 1989, IN PRESS SOLID STATE

[20] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES [J].

HIMPSEL, FJ ;

HEIMANN, P ;

CHIANG, TC ;

EASTMAN, DE .

PHYSICAL REVIEW LETTERS, 1980, 45 (13) :1112-1115

← 1 2 3 4 5 →