COMPOSITIONAL DEPENDENCES OF BAND-GAP ENERGY AND ELECTRON AND LIGHT HOLE EFFECTIVE MASSES IN INXGA1-XAS

被引:7
作者
HRIVNAK, L
机构
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1989年 / 116卷 / 01期
关键词
D O I
10.1002/pssa.2211160159
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:K73 / K76
页数:4
相关论文
共 15 条
[1]   ENERGY BAND PARAMETERS OF INAS AT VARIOUS TEMPERATURES [J].
ADACHI, E .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1968, 24 (05) :1178-&
[2]   SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].
BLAKEMORE, JS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181
[3]  
CHAMBERLAIN JM, 1972, P INT C PHYS SEMICON, P1016
[4]   MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITIES OF INGAASP INP HETEROJUNCTIONS USING CAPACITANCE VOLTAGE ANALYSIS [J].
FORREST, SR ;
SCHMIDT, PH ;
WILSON, RB ;
KAPLAN, ML .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :37-44
[5]   OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].
GOETZ, KH ;
BIMBERG, D ;
JURGENSEN, H ;
SELDERS, J ;
SOLOMONOV, AV ;
GLINSKII, GF ;
RAZEGHI, M .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4543-4552
[6]   OPTICAL-PUMPING AND THE VALENCE-BAND LIGHT-HOLE EFFECTIVE MASS IN GAXIN1-XASYP1-Y (YCONGRUENT-TO2.2X) [J].
HERMANN, C ;
PEARSALL, TP .
APPLIED PHYSICS LETTERS, 1981, 38 (06) :450-452
[7]  
HRIVNAK L, 1988, ACTA PHYS SLOVACA, V38, P346
[8]  
HRIVNAK L, 1989, GALLIUM ARSENIDE, P1
[9]  
HRIVNAK L, UNPUB APPL PHYS LETT
[10]  
LORENZ MR, 1970, 10 P INT C PHYS SEM, P444