MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITIES OF INGAASP INP HETEROJUNCTIONS USING CAPACITANCE VOLTAGE ANALYSIS

被引：22

作者：

FORREST, SR ^{[1
]}

SCHMIDT, PH ^{[1
]}

WILSON, RB ^{[1
]}

KAPLAN, ML ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期

关键词：

D O I：

10.1116/1.583336

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：37 / 44

页数：8

共 21 条

[1] PHOTOLUMINESCENCE MEASUREMENTS OF BAND DISCONTINUITY IN INP-INGAP AS HETEROSTRUCTURES
BRUNEMEIER, PE
DEPPE, DG
HOLONYAK, N
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 755 - 757
[2] DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE
DINGLE, R
GOSSARD, AC
WIEGMANN, W
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (21) : 1327 - 1330
[3] EVALUATION OF III-V-SEMICONDUCTOR WAFERS USING NONDESTRUCTIVE ORGANIC-ON-INORGANIC CONTACT BARRIERS
FORREST, SR
KAPLAN, ML
SCHMIDT, PH
GATES, JV
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2892 - 2895
[4] ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DIODES .1. THEORY WITH APPLICATIONS TO ORGANIC THIN-FILMS AND PROTOTYPE DEVICES
FORREST, SR
KAPLAN, ML
SCHMIDT, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) : 1492 - 1507
[5] AN N-IN0.53GA0.47AS-N-INP RECTIFIER
FORREST, SR
KIM, OK
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5838 - 5842
[6] ORGANIC-ON-GAAS CONTACT BARRIER DIODES
FORREST, SR
KAPLAN, ML
SCHMIDT, PH
PARSEY, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 867 - 870
[7] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS
FORREST, SR
SCHMIDT, PH
WILSON, RB
KAPLAN, ML
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1199 - 1201
[8] DEEP LEVELS IN IN0.53GA0.47AS/INP HETEROSTRUCTURES
FORREST, SR
KIM, OK
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5738 - 5745
[9] ANALYSIS OF THE DARK CURRENT AND PHOTORESPONSE OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES
FORREST, SR
KIM, OK
SMITH, RG
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (10) : 951 - 968
[10] PREDICTION OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES FROM BULK BAND STRUCTURES
FRENSLEY, WR
KROEMER, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 810 - 815

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