MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITIES OF INGAASP INP HETEROJUNCTIONS USING CAPACITANCE VOLTAGE ANALYSIS

被引：22

作者：

FORREST, SR ^{[1
]}

SCHMIDT, PH ^{[1
]}

WILSON, RB ^{[1
]}

KAPLAN, ML ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期

关键词：

D O I：

10.1116/1.583336

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：37 / 44

页数：8

共 21 条

[11] DETERMINATION OF HETEROJUNCTION BAND OFFSETS BY CAPACITANCE-VOLTAGE PROFILING THROUGH NONABRUPT ISOTYPE HETEROJUNCTIONS
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[12] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING
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[13] HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTO-DIODE WITH INGAASP BUFFER LAYERS
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[J]. ELECTRONICS LETTERS, 1982, 18 (22) : 945 - 946
[14] CORRELATION FOR III-V SEMICONDUCTORS AND II-VI-SEMICONDUCTORS OF AU SCHOTTKY-BARRIER ENERGY WITH ANION ELECTRONEGATIVITY
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MCGILL, TC
MEAD, CA
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (01) : 56 - 58
[15] MILLER RC, 1975, PHYS REV LETT, V34, P1327
[16] SCHOTTKY BARRIERS AND OHMIC CONTACTS ON NORMAL-TYPE INP BASED COMPOUND SEMICONDUCTORS FOR MICROWAVE FETS
MORKOC, H
DRUMMOND, TJ
STANCHAK, CM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 1 - 5
[17] NEAR-EQUILIBRIUM LPE GROWTH OF LOW THRESHOLD CURRENT-DENSITY IN 1-XGAXASYP1-Y (LAMBDA = 1.35-MU) DH LASERS
NELSON, RJ
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 654 - 656
[18] A CAPACITANCE INVESTIGATION OF INGAAS/INP ISOTYPE HETEROJUNCTION
OGURA, M
MIZUTA, M
ONAKA, K
KUKIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10): : 1502 - 1509
[19] DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITIES OF GAAS/ALXGA1-XAS INTERFACES BY CAPACITANCE-VOLTAGE MEASUREMENTS
OKUMURA, H
MISAWA, S
YOSHIDA, S
GONDA, S
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 377 - 379
[20] TRANSIENT CAPACITANCE ANALYSIS OF III-V SEMICONDUCTORS WITH ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DIODES
STAVOLA, M
PARSEY, JM
FORREST, SR
KAPLAN, ML
SCHMIDT, PH
YOUNG, MSS
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (05) : 506 - 508

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