DETERMINATION OF HETEROJUNCTION BAND OFFSETS BY CAPACITANCE-VOLTAGE PROFILING THROUGH NONABRUPT ISOTYPE HETEROJUNCTIONS

被引：61

作者：

KROEMER, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 05期

关键词：

D O I：

10.1063/1.95572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：504 / 505

页数：2

共 9 条

[1]

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[7] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING [J].

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[8] HIGH MOBILITY HOLE GAS AND VALENCE-BAND OFFSET IN MODULATION-DOPED PARA-ALGAAS/GAAS HETEROJUNCTIONS [J].

WANG, WI ;

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[9]

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