CORRELATION FOR III-V SEMICONDUCTORS AND II-VI-SEMICONDUCTORS OF AU SCHOTTKY-BARRIER ENERGY WITH ANION ELECTRONEGATIVITY

被引：219

作者：

MCCALDIN, JO ^{[1
]}

MCGILL, TC ^{[1
]}

MEAD, CA ^{[1
]}

机构：

[1] CALTECH,PASADEMA,CA 91125

来源：

PHYSICAL REVIEW LETTERS | 1976年 / 36卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.36.56

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：56 / 58

页数：3

共 34 条

[1] SCHOTTKY BARRIERS ON ZNTE [J].

BAKER, WD ;

MILNES, AG .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5152-5153

[2] SIMPLIFIED LCAO METHOD FOR ZINCBLENDE, WURTZITE, AND MIXED CRYSTAL STRUCTURES [J].

BIRMAN, JL .

PHYSICAL REVIEW, 1959, 115 (06) :1493-1505

[3]

CARDONA M, 1969, MODULATION SPECTROSC, P67

[4] TIGHT-BINDING CALCULATIONS OF VALENCE BANDS OF DIAMOND AND ZINCBLENDE CRYSTALS [J].

CHADI, DJ ;

COHEN, ML .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (01) :405-419

[5] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES [J].

COWLEY, AM .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3024-&

[6] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS [J].

EASTMAN, DE ;

FREEOUF, JL .

PHYSICAL REVIEW LETTERS, 1975, 34 (26) :1624-1627

[7]

Freeouf J. L., 1975, Critical Reviews in Solid State Sciences, V5, P245, DOI 10.1080/10408437508243482

[8] SURFACE STATE BAND ON GAAS (110) FACE [J].

GREGORY, PE ;

SPICER, WE ;

CIRACI, S ;

HARRISON, WA .

APPLIED PHYSICS LETTERS, 1974, 25 (09) :511-514

[9]

HALL GG, 1952, PHILOS MAG, V43, P338

[10] BOND-ORBITAL MODEL .2. [J].

HARRISON, WA ;

CIRACI, S .

PHYSICAL REVIEW B, 1974, 10 (04) :1516-1527

← 1 2 3 4 →