共 20 条
[1]
ELECTRICAL MEASUREMENTS OF THE CONDUCTION-BAND DISCONTINUITY OF THE ABRUPT GE-GAAS (100) HETEROJUNCTION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1983, 1 (03)
:675-681
[4]
MEASUREMENT OF POTENTIAL AT SEMICONDUCTOR INTERFACES BY ELECTRON-SPECTROSCOPY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1983, 1 (02)
:320-327
[5]
HETEROJUNCTION INTERFACE FORMATION - SI ON GE, GAAS, AND CDS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1983, 1 (02)
:692-694
[6]
KIRCHNER PD, 1983, 41ST ANN DEV RES C B
[7]
BAND DISCONTINUITIES AND INTERFACE FERMI-LEVEL POSITIONS IN GE-GAAS(110) HETEROJUNCTIONS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1983, 1 (03)
:684-686