ELECTRICAL MEASUREMENTS OF THE CONDUCTION-BAND DISCONTINUITY OF THE ABRUPT GE-GAAS (100) HETEROJUNCTION

被引：18

作者：

BALLINGALL, JM

WOOD, CEC

EASTMAN, LF

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

[2] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582575

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：675 / 681

页数：7

共 34 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[2] ELECTRON-TRANSPORT ACROSS THE ABRUPT GE-GAAS N-N HETEROJUNCTION [J].

BALLINGALL, JM ;

STALL, RA ;

WOOD, CEC ;

EASTMAN, LF .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4098-4103

[3] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J].

BARAFF, GA ;

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1977, 38 (05) :237-240

[4] GE-GAAS(110) INTERFACE FORMATION [J].

BAUER, RS ;

MCMENAMIN, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1444-1449

[5]

BAUER RS, 1982, C PHYSICS CHEM SEMIC

[6]

BONCHBRUYERICH VL, 1966, ELECTRONIC THEORY HE, P79

[7] ALLOYED OHMIC CONTACTS TO GAAS [J].

BRASLAU, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :803-807

[8] NATURE OF VALLEY CURRENT IN TUNNEL DIODES [J].

BRODY, TP .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (01) :100-&

[9] A STUDY OF THE CONDUCTION PROPERTIES OF A RECTIFYING NGAAS-N(GA,AL)AS HETEROJUNCTION [J].

CHANDRA, A ;

EASTMAN, LF .

SOLID-STATE ELECTRONICS, 1980, 23 (06) :599-603

[10] EFFECT OF SUBSTRATE SURFACE-TREATMENT IN MOLECULAR-BEAM EPITAXY ON THE VERTICAL ELECTRONIC TRANSPORT THROUGH THE FILM-SUBSTRATE INTERFACE [J].

CHANG, CA ;

HEIBLUM, M ;

LUDEKE, R ;

NATHAN, MI .

APPLIED PHYSICS LETTERS, 1981, 39 (03) :229-231

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