GE-GAAS(110) INTERFACE FORMATION

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1340 - 1343

[3] BACHRACH RZ, 1976, MATERIAL RES SOC S M

[4] BACHRACH RZ, 1978, 14TH P INT C PHYS SE

[5] ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 999 - 1005

[6] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (05) : 237 - 240

[7] BAUER R, UNPUBLISHED

[8] EMPTY SEMICONDUCTOR SURFACE-STATES - CORE-LEVEL PHOTO-YIELD STUDIES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 378 - 382

[9] BAUER RS, 1977, 3RD INT C SOL SURF, P2699

[10] BAUER RS, 1977, 7TH P INT VAC C, P2699

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1340 - 1343

[3] BACHRACH RZ, 1976, MATERIAL RES SOC S M

[4] BACHRACH RZ, 1978, 14TH P INT C PHYS SE

[5] ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 999 - 1005

[6] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (05) : 237 - 240

[7] BAUER R, UNPUBLISHED

[8] EMPTY SEMICONDUCTOR SURFACE-STATES - CORE-LEVEL PHOTO-YIELD STUDIES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 378 - 382

[9] BAUER RS, 1977, 3RD INT C SOL SURF, P2699

[10] BAUER RS, 1977, 7TH P INT VAC C, P2699