ELECTRON-TRANSPORT ACROSS THE ABRUPT GE-GAAS N-N HETEROJUNCTION

被引：8

作者：

BALLINGALL, JM ^{[1
]}

STALL, RA ^{[1
]}

WOOD, CEC ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

关键词：

D O I：

10.1063/1.329261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4098 / 4103

页数：6

共 19 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[2] [Anonymous], 1939, WISS VEROFF SIEMENS
[3] Bethe H. A., 1942, 4312 MASS I TECHN RA
[4] BLAKEMORE JS, 1952, ELECTRON COMMUN, V29, P131
[5] BROOKS H, 1955, ADV ELECTRONICS ELEC, V7, P156
[6] A STUDY OF THE CONDUCTION PROPERTIES OF A RECTIFYING NGAAS-N(GA,AL)AS HETEROJUNCTION
CHANDRA, A
EASTMAN, LF
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (06) : 599 - 603
[7] CONDUCTION PROPERTIES OF GE-GAAS1-XPX N-N HETEROJUNCTIONS
CHANG, LL
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (09) : 721 - &
[8] CHARACTERISTICS OF ISOTYPE N GE-N GAAS HETEROJUNCTIONS
DEJAEGER, JC
SALMER, G
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1980, 127 (04): : 207 - 211
[9] EFFECT OF CRYSTAL ORIENTATION ON GE-GAAS HETEROJUNCTIONS
FANG, FF
HOWARD, WE
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 612 - &
[10] PREDICTION OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES FROM BULK BAND STRUCTURES
FRENSLEY, WR
KROEMER, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 810 - 815