CONDUCTION PROPERTIES OF GE-GAAS1-XPX N-N HETEROJUNCTIONS

[1] AIGRAIN P, 1961, SELECTED CONSTANTS R

[2] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[3] ALLEN FG, 1963, B AM PHYS SOC, V8, P198

[4] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[5] [Anonymous], 1957, RECTIFYING SEMICONDU

[6] FIELD DEPENDENCE OF SURFACE MOBILITY AT N-N HETEROJUNCTION INTERFACE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (01) : 86 - &

[7] THE ELECTRIC CONDUCTIVITY OF SIMPLE SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1950, 63 (361): : 75 - 76

[8] FIELD-EFFECT INTERFACE CONDUCTANCE IN GE-GAAS N-N HETEROJUNCTIONS ( GE-GAAS HETEROJUNCTION INTERFACE CONDUCTANCE EFFECT OF ELECTRIC FIELD ON AC + DC TECHNIQUES E ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (01) : 3 - &

[9] ESAKI L, 1964, SOLID SURFACES, P127

[10] EFFECT OF CRYSTAL ORIENTATION ON GE-GAAS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 612 - &

[1] AIGRAIN P, 1961, SELECTED CONSTANTS R

[2] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[3] ALLEN FG, 1963, B AM PHYS SOC, V8, P198

[4] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[5] [Anonymous], 1957, RECTIFYING SEMICONDU

[6] FIELD DEPENDENCE OF SURFACE MOBILITY AT N-N HETEROJUNCTION INTERFACE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (01) : 86 - &

[7] THE ELECTRIC CONDUCTIVITY OF SIMPLE SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1950, 63 (361): : 75 - 76

[8] FIELD-EFFECT INTERFACE CONDUCTANCE IN GE-GAAS N-N HETEROJUNCTIONS ( GE-GAAS HETEROJUNCTION INTERFACE CONDUCTANCE EFFECT OF ELECTRIC FIELD ON AC + DC TECHNIQUES E ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (01) : 3 - &

[9] ESAKI L, 1964, SOLID SURFACES, P127

[10] EFFECT OF CRYSTAL ORIENTATION ON GE-GAAS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 612 - &