FIELD DEPENDENCE OF SURFACE MOBILITY AT N-N HETEROJUNCTION INTERFACE

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] CHANG LL, TO BE PUBLISHED

[3] FIELD-EFFECT INTERFACE CONDUCTANCE IN GE-GAAS N-N HETEROJUNCTIONS ( GE-GAAS HETEROJUNCTION INTERFACE CONDUCTANCE EFFECT OF ELECTRIC FIELD ON AC + DC TECHNIQUES E ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (01) : 3 - &

[4] ESAKI L, 1964, JUN INT C SOL SURF P

[5] EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS [J]. PHYSICAL REVIEW, 1955, 97 (03): : 641 - 646

[6] Shockley W., 1951, US Patent, Patent No. 2569347

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] CHANG LL, TO BE PUBLISHED

[3] FIELD-EFFECT INTERFACE CONDUCTANCE IN GE-GAAS N-N HETEROJUNCTIONS ( GE-GAAS HETEROJUNCTION INTERFACE CONDUCTANCE EFFECT OF ELECTRIC FIELD ON AC + DC TECHNIQUES E ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (01) : 3 - &

[4] ESAKI L, 1964, JUN INT C SOL SURF P

[5] EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS [J]. PHYSICAL REVIEW, 1955, 97 (03): : 641 - 646

[6] Shockley W., 1951, US Patent, Patent No. 2569347