MEASUREMENT OF POTENTIAL AT SEMICONDUCTOR INTERFACES BY ELECTRON-SPECTROSCOPY

被引:60
作者
GRANT, RW
KRAUT, EA
KOWALCZYK, SP
WALDROP, JR
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期
关键词
D O I
10.1116/1.582550
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:320 / 327
页数:8
相关论文
共 59 条
[1]   COMPARISON OF APS AND FRESCA CORE LEVEL BINDING-ENERGY MEASUREMENTS [J].
ANDERSON, CR ;
LEE, RN ;
MORAR, JF ;
PARK, RL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :617-621
[2]   PRECISELY CONSISTENT ENERGY CALIBRATION METHOD FOR X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
ASAMI, K .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 9 (06) :469-478
[3]  
AULEYTNER J, 1963, ARK FYS, V23, P165
[4]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[5]   CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATION [J].
BRILLSON, LJ ;
BRUCKER, CF ;
KATNANI, AD ;
STOFFEL, NG ;
MARGARITONDO, G .
APPLIED PHYSICS LETTERS, 1981, 38 (10) :784-786
[6]   ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR [J].
BRILLSON, LJ ;
BRUCKER, CF ;
KATNANI, AD ;
STOFFEL, NG ;
MARGARITONDO, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :661-666
[7]   FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES [J].
BRILLSON, LJ ;
BRUCKER, CF ;
KATNANI, AD ;
STOFFEL, NG ;
DANIELS, R ;
MARGARITONDO, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :564-569
[8]  
BRUNDLE CR, 1977, ELECTRON SPECTROSCOP, V1
[9]  
Cardona M., 1978, PHOTOEMISSION SOLIDS
[10]  
CARDONA M, 1978, PHOTOEMISSION SOLIDS, V2