FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES

被引：106

作者：

BRILLSON, LJ ^{[1
]}

BRUCKER, CF ^{[1
]}

KATNANI, AD ^{[1
]}

STOFFEL, NG ^{[1
]}

DANIELS, R ^{[1
]}

MARGARITONDO, G ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期

关键词：

D O I：

10.1116/1.571764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：564 / 569

页数：6

共 26 条

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[3] CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATION
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STOFFEL, NG
MARGARITONDO, G
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 784 - 786
[4] ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR
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STOFFEL, NG
MARGARITONDO, G
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[5] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES
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STOFFEL, NG
KATNANI, AD
MARGARITONDO, G
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[6] BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177
[7] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY
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[8] BRILLSON LJ, UNPUB
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[10] REACTIVE INTER-DIFFUSION AND ELECTRONIC BARRIERS AT METAL-CDS AND METAL-CDSE INTERFACES - CONTROL OF SCHOTTKY-BARRIER HEIGHT USING REACTIVE INTERLAYERS
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