TRANSIENT CAPACITANCE ANALYSIS OF III-V SEMICONDUCTORS WITH ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DIODES

被引：7

作者：

STAVOLA, M

PARSEY, JM

FORREST, SR

KAPLAN, ML

SCHMIDT, PH

YOUNG, MSS

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 05期

关键词：

D O I：

10.1063/1.95573

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：506 / 508

页数：3

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共 14 条

[1] ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DIODES .1. THEORY WITH APPLICATIONS TO ORGANIC THIN-FILMS AND PROTOTYPE DEVICES
FORREST, SR
KAPLAN, ML
SCHMIDT, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) : 1492 - 1507
[2] ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DIODES .2. DEPENDENCE ON ORGANIC FILM AND METAL CONTACT PROPERTIES
FORREST, SR
KAPLAN, ML
SCHMIDT, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 543 - 551
[3] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS
FORREST, SR
SCHMIDT, PH
WILSON, RB
KAPLAN, ML
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1199 - 1201
[4] ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DEVICES
FORREST, SR
KAPLAN, ML
SCHMIDT, PH
FELDMANN, WL
YANOWSKI, E
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 90 - 93
[5] FORREST SR, UNPUB
[6] HOLMES DE, 1982, APPL PHYS LETT, V40, P42
[7] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY
LANG, DV
LOGAN, RA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1053 - 1066
[8] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[9] LEVINSON M, 1984, J ELECTRON MATER A, V14, P1133
[10] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS
MARTIN, GM
MITONNEAU, A
MIRCEA, A
[J]. ELECTRONICS LETTERS, 1977, 13 (07) : 191 - 193