RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS

被引：161

作者：

FORREST, SR

SCHMIDT, PH

WILSON, RB

KAPLAN, ML

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 11期

关键词：

D O I：

10.1063/1.95096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1199 / 1201

页数：3

相关论文

共 17 条

[1] DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE
DINGLE, R
GOSSARD, AC
WIEGMANN, W
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (21) : 1327 - 1330
[2] ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DIODES .1. THEORY WITH APPLICATIONS TO ORGANIC THIN-FILMS AND PROTOTYPE DEVICES
FORREST, SR
KAPLAN, ML
SCHMIDT, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) : 1492 - 1507
[3] AN N-IN0.53GA0.47AS-N-INP RECTIFIER
FORREST, SR
KIM, OK
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5838 - 5842
[4] OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES
FORREST, SR
KIM, OK
SMITH, RG
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 95 - 98
[5] DEEP LEVELS IN IN0.53GA0.47AS/INP HETEROSTRUCTURES
FORREST, SR
KIM, OK
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5738 - 5745
[6] ANALYSIS OF THE DARK CURRENT AND PHOTORESPONSE OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES
FORREST, SR
KIM, OK
SMITH, RG
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (10) : 951 - 968
[7] ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DEVICES
FORREST, SR
KAPLAN, ML
SCHMIDT, PH
FELDMANN, WL
YANOWSKI, E
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 90 - 93
[8] FORREST SR, UNPUB
[9] PREDICTION OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES FROM BULK BAND STRUCTURES
FRENSLEY, WR
KROEMER, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 810 - 815
[10] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING
KROEMER, H
CHIEN, WY
HARRIS, JS
EDWALL, DD
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 295 - 297