ANALYSIS OF THE DARK CURRENT AND PHOTORESPONSE OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES

被引：60

作者：

FORREST, SR ^{[1
]}

KIM, OK ^{[1
]}

SMITH, RG ^{[1
]}

机构：

[1] BELL TEL LABS INC, ALLENTOWN, PA 18103 USA

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 10期

关键词：

D O I：

10.1016/0038-1101(83)90071-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：951 / 968

页数：18

共 33 条

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