EVALUATION OF III-V-SEMICONDUCTOR WAFERS USING NONDESTRUCTIVE ORGANIC-ON-INORGANIC CONTACT BARRIERS

被引：12

作者：

FORREST, SR

KAPLAN, ML

SCHMIDT, PH

GATES, JV

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.335226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2892 / 2895

页数：4

相关论文

共 14 条

[1] INSTRUMENT FOR RAPID DETERMINATION OF SEMICONDUCTOR IMPURITY PROFILES
BAXANDALL, PJ
COLLIVER, DJ
FRAY, AF
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1971, 4 (03): : 213 - +
[2] INGAASP P-I-N PHOTO-DIODES WITH LOW DARK CURRENT AND SMALL CAPACITANCE
BURRUS, CA
DENTAI, AG
LEE, TP
[J]. ELECTRONICS LETTERS, 1979, 15 (20) : 655 - 657
[3] ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DIODES .1. THEORY WITH APPLICATIONS TO ORGANIC THIN-FILMS AND PROTOTYPE DEVICES
FORREST, SR
KAPLAN, ML
SCHMIDT, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) : 1492 - 1507
[4] DEEP LEVELS IN IN0.53GA0.47AS/INP HETEROSTRUCTURES
FORREST, SR
KIM, OK
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5738 - 5745
[5] LOW DARK-CURRENT, HIGH-EFFICIENCY PLANAR IN0.53 GA0.47 AS-INP P-I-N PHOTO-DIODES
FORREST, SR
CAMLIBEL, I
KIM, OK
STOCKER, HJ
ZUBER, JR
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (11): : 283 - 285
[6] ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DEVICES
FORREST, SR
KAPLAN, ML
SCHMIDT, PH
FELDMANN, WL
YANOWSKI, E
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 90 - 93
[7] LEDERMAN A, 1981, SOLID STATE TECHNOL, V24, P123
[8] PEARSALL TP, 1982, GAINASP ALLOY SEMICO
[9] NON-INVASIVE ANALYSIS OF INP SURFACES USING HG-INP SCHOTTKY-BARRIER DIODES
PRESSMAN, LD
FORREST, SR
BONNER, WA
VANUITERT, LG
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 969 - 971
[10] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION
SPICER, WE
CHYE, PW
SKEATH, PR
SU, CY
LINDAU, I
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1422 - 1433