LOW DARK-CURRENT, HIGH-EFFICIENCY PLANAR IN0.53 GA0.47 AS-INP P-I-N PHOTO-DIODES

被引：32

作者：

FORREST, SR

CAMLIBEL, I

KIM, OK

STOCKER, HJ

ZUBER, JR

机构：

来源：

ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 11期

关键词：

D O I：

10.1109/EDL.1981.25434

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：283 / 285

页数：3

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共 12 条

[1] INGAAS DETECTOR FOR 1.0-1.7-MUM WAVELENGTH RANGE
BACHMANN, KJ
SHAY, JL
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 446 - 448
[2] PERIPHERAL AND DIFFUSED LAYER EFFECTS ON DOPING PROFILES
BUEHLER, MG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) : 1171 - +
[3] INGAASP P-I-N PHOTO-DIODES WITH LOW DARK CURRENT AND SMALL CAPACITANCE
BURRUS, CA
DENTAI, AG
LEE, TP
[J]. ELECTRONICS LETTERS, 1979, 15 (20) : 655 - 657
[4] EVIDENCE FOR TUNNELING IN REVERSE-BIASED III-V PHOTODETECTOR DIODES
FORREST, SR
DIDOMENICO, M
SMITH, RG
STOCKER, HJ
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 580 - 582
[5] IN0.53GA0.47AS PHOTO-DIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELING
FORREST, SR
LEHENY, RF
NAHORY, RE
POLLACK, MA
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 322 - 325
[6] Grove A S, 1967, PHYS TECHNOLOGY SEMI
[7] LEHENY RF, 1979, ELECTRON LETT, V15, P713, DOI 10.1049/el:19790507
[8] MATSUSHIMA Y, 1979, ANN C JAPAN ELECTRON
[9] LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY LATTICE MATCHED GAXIN1-XAS ON LESS-THAN111 GREATER-THAN-B INP
OLIVER, JD
EASTMAN, LF
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (04) : 693 - 712
[10] PLANAR TYPE VAPOR-PHASE EPITAXIAL IN0.53GA0.47AS PHOTO-DIODE
SUSA, N
YAMAUCHI, Y
ANDO, H
KANBE, H
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (04): : 55 - 57