PERIPHERAL AND DIFFUSED LAYER EFFECTS ON DOPING PROFILES

[1] AMRON I, 1967, ELECTROCHEM TECHNOL, V5, P94

[2] AMRON I, 1964, ELECTROCHEM TECHNOL, V2, P327

[3] CHANG YF, 1967, SOLID STATE ELECTRON, V10, P281

[4] CAPACITANCE VOLTAGE CHARACTERISTICS OF NEUTRON IRRADIATED N+PP+ AND P+NN+ JUNCTIONS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 410 - +

[5] MEASUREMENT OF EPITAXIAL DOPING DENSITY VS DEPTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (10) : 1085 - +

[6] CALCULATION OF DOPING PROFILES FROM C(V) MEASUREMENTS ON 2-SIDED JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (12) : 1087 - &

[7] GARDNER EE, 1967, MEAS TECH, P240

[8] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[9] HILIBRAND J, 1960, RCA REV, V21, P245

[10] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[1] AMRON I, 1967, ELECTROCHEM TECHNOL, V5, P94

[2] AMRON I, 1964, ELECTROCHEM TECHNOL, V2, P327

[3] CHANG YF, 1967, SOLID STATE ELECTRON, V10, P281

[4] CAPACITANCE VOLTAGE CHARACTERISTICS OF NEUTRON IRRADIATED N+PP+ AND P+NN+ JUNCTIONS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 410 - +

[5] MEASUREMENT OF EPITAXIAL DOPING DENSITY VS DEPTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (10) : 1085 - +

[6] CALCULATION OF DOPING PROFILES FROM C(V) MEASUREMENTS ON 2-SIDED JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (12) : 1087 - &

[7] GARDNER EE, 1967, MEAS TECH, P240

[8] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[9] HILIBRAND J, 1960, RCA REV, V21, P245

[10] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +