CAPACITANCE VOLTAGE CHARACTERISTICS OF NEUTRON IRRADIATED N+PP+ AND P+NN+ JUNCTIONS

被引:4
作者
CRABBE, JS
ASHLEY, KL
机构
关键词
D O I
10.1109/TNS.1971.4326462
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:410 / +
页数:1
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共 18 条
[1]  
AIKEN JG, 1969, F1962868C0184 CONTR
[2]   SPACE-CHARGE REGION OF NEUTRON-IRRADIATED SILICON P+N JUNCTIONS [J].
BUEHLER, MG .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) :341-+
[3]  
BUEHLER MG, 1969, T METALL SOC AIME, V245, P511
[4]   CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].
CAUGHEY, DM ;
THOMAS, RE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+
[5]   INJECTION-LEVEL STUDIES IN NEUTRON-IRRADIATED SILICON [J].
CURTIS, OL ;
GERMANO, CA .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :68-+
[6]   APPLICATION OF DISTRIBUTED EQUILIBRIUM EQUIVALENT CIRCUIT MODEL TO SEMICONDUCTOR JUNCTIONS [J].
FORBES, L ;
SAH, CT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (12) :1036-+
[7]   FACTORS INFLUENCING PREDICTION OF TRANSISTOR CURRENT GAIN IN NEUTRON RADIATION [J].
FRANK, M ;
TAULBEE, CD .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :127-+
[8]   DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS [J].
GOSSICK, BR .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1214-1218
[9]   APPLICATION OF NEUTRON DAMAGE MODELS TO SEMICONDUCTOR DEVICE STUDIES [J].
GREGORY, BL ;
GWYN, CW .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) :325-+
[10]  
GREGORY BL, 1969, IEEE T NUCL SCI, VNS16