APPLICATION OF NEUTRON DAMAGE MODELS TO SEMICONDUCTOR DEVICE STUDIES

被引：26

作者：

GREGORY, BL

GWYN, CW

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1970年 / NS17卷 / 06期

关键词：

D O I：

10.1109/TNS.1970.4325813

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：325 / +

页数：1

共 21 条

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CHENG, LJ ;

LORI, J .

PHYSICAL REVIEW, 1968, 171 (03) :856-+

[2] RECOMBINATION STATISTICS FOR NEUTRON BOMBARDED SILICON TRANSISTORS [J].

CHOW, MC ;

AZAREWICZ, JL ;

GOBEN, CA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (06) :88-+

[3] INJECTION-LEVEL STUDIES IN NEUTRON-IRRADIATED SILICON [J].

CURTIS, OL ;

GERMANO, CA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :68-+

[4] EFFECTS OF OXYGEN AND DOPANT ON LIFETIME IN NEUTRON-IRRADIATED SILICON [J].

CURTIS, OL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) :33-+

[5] MINORITY CARRIER RECOMBINATION IN NEUTRON IRRADIATED SILICON [J].

GREGORY, BL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) :53-+

[6]

GREGORY BL, UNPUBLISHED DATA

[7]

GROVE AS, PHYSICS TECHNOLOGY S

[8] ANALYSIS OF RADIATION EFFECTS IN SEMICONDUCTOR JUNCTION DEVICES [J].

GWYN, CW ;

SCHARFETTER, DL ;

WIRTH, JL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :153-+

[9]

GWYN CW, TO BE PUBLISHED

[10] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

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