EFFECTS OF OXYGEN AND DOPANT ON LIFETIME IN NEUTRON-IRRADIATED SILICON

[1] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1195 - 1198

[2] ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1258 - 1268

[3] CURTIS, 1965, 2351 HARR DIAM LAB R

[4] RADIATION-INDUCED RECOMBINATION AND TRAPPING CENTERS IN GERMANIUM .1. NATURE OF RECOMBINATION PROCESS [J]. PHYSICAL REVIEW, 1961, 124 (06): : 1731 - &

[5] AN EFFICIENT FLASH X-RAY FOR MINORITY CARRIER LIFETIME MEASUREMENTS AND OTHER RESEARCH PURPOSES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09): : 1224 - +

[6] RADIATION-INDUCED RECOMBINATION CENTERS IN GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (12) : 1722 - 1729

[7] EXPLANATION FOR DISCREPANCY IN RECOMBINATION LEVEL POSITIONS IN IRRADIATED N-TYPE GE REPORTED BY VARIOUS OBSERVERS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) : 2094 - &

[8] RADIATION-INDUCED RECOMBINATION AND TRAPPING CENTERS IN GERMANIUM .2. ANNEALING IN GAMMA-IRRADIATED, ANTIMONY-, AND ARSENIC-DOPED MATERIAL [J]. PHYSICAL REVIEW, 1962, 126 (04): : 1342 - &

[9] DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1214 - 1218

[10] MACKAY JW, 1965, RADIATION DAMAGE SEM, P12

[1] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1195 - 1198

[2] ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1258 - 1268

[3] CURTIS, 1965, 2351 HARR DIAM LAB R

[4] RADIATION-INDUCED RECOMBINATION AND TRAPPING CENTERS IN GERMANIUM .1. NATURE OF RECOMBINATION PROCESS [J]. PHYSICAL REVIEW, 1961, 124 (06): : 1731 - &

[5] AN EFFICIENT FLASH X-RAY FOR MINORITY CARRIER LIFETIME MEASUREMENTS AND OTHER RESEARCH PURPOSES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09): : 1224 - +

[6] RADIATION-INDUCED RECOMBINATION CENTERS IN GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (12) : 1722 - 1729

[7] EXPLANATION FOR DISCREPANCY IN RECOMBINATION LEVEL POSITIONS IN IRRADIATED N-TYPE GE REPORTED BY VARIOUS OBSERVERS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) : 2094 - &

[8] RADIATION-INDUCED RECOMBINATION AND TRAPPING CENTERS IN GERMANIUM .2. ANNEALING IN GAMMA-IRRADIATED, ANTIMONY-, AND ARSENIC-DOPED MATERIAL [J]. PHYSICAL REVIEW, 1962, 126 (04): : 1342 - &

[9] DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1214 - 1218

[10] MACKAY JW, 1965, RADIATION DAMAGE SEM, P12