EFFECTS OF OXYGEN AND DOPANT ON LIFETIME IN NEUTRON-IRRADIATED SILICON

被引：49

作者：

CURTIS, OL

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1966年 / NS13卷 / 06期

关键词：

D O I：

10.1109/TNS.1996.4324343

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：33 / +

页数：1

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共 15 条

[11] EFFECTS OF DOSAGE + IMPURITIES ON RADIATION DAMAGE OF CARRIER LIFE TIME IN SI
NAKANO, T
INUISHI, Y
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (06) : 851 - &
[12] Pauling L., 1960, NATURE CHEM BOND, P246
[13] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON
WATKINS, GD
CORBETT, JW
WALKER, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1198 - 1203
[14] DEFECTS IN IRRADIATED SILICON .1. ELECTRON SPIN RESONANCE OF SI-A CENTER
WATKINS, GD
CORBETT, JW
[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1001 - &
[15] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN IRRADIATED SILICON
WATKINS, GD
CORBETT, JW
[J]. DISCUSSIONS OF THE FARADAY SOCIETY, 1961, (31): : 86 - &