RADIATION-INDUCED RECOMBINATION AND TRAPPING CENTERS IN GERMANIUM .2. ANNEALING IN GAMMA-IRRADIATED, ANTIMONY-, AND ARSENIC-DOPED MATERIAL

被引：25

作者：

CURTIS, OL

CRAWFORD, JH

机构：

来源：

PHYSICAL REVIEW | 1962年 / 126卷 / 04期

关键词：

D O I：

10.1103/PhysRev.126.1342

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1342 / &

共 14 条

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[4] ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS
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[5] RADIATION-INDUCED RECOMBINATION AND TRAPPING CENTERS IN GERMANIUM .1. NATURE OF RECOMBINATION PROCESS
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CRAWFORD, JH
[J]. PHYSICAL REVIEW, 1961, 124 (06): : 1731 - &
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