ANALYSIS OF RADIATION EFFECTS IN SEMICONDUCTOR JUNCTION DEVICES

被引：79

作者：

GWYN, CW

SCHARFETTER, DL

WIRTH, JL

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1967年 / NS14卷 / 06期

关键词：

D O I：

10.1109/TNS.1967.4324787

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：153 / +

页数：1

共 29 条

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[7] PROPERTIES OF SILICON AND GERMANIUM [J].

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