ANALYSIS OF RADIATION EFFECTS IN SEMICONDUCTOR JUNCTION DEVICES

被引:79
作者
GWYN, CW
SCHARFETTER, DL
WIRTH, JL
机构
关键词
D O I
10.1109/TNS.1967.4324787
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:153 / +
页数:1
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共 29 条
[11]  
GOBEN CA, 1964, SCR64195 SAND CORP R
[12]   AVALANCHE REGION OF IMPATT DIODES [J].
GUMMEL, HK ;
SCHARFETTER, DL .
BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (10) :1797-+
[13]  
GUMMEL HK, 1966, JUN SOL DEV RES C EV
[14]  
HOOD JA, 1964, SCTM6469 SAND CORP R
[15]  
KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164
[16]  
KUCKUCK RW, UCRL14405
[17]   DESIGN TRADEOFFS FOR NEUTRON RADIATION-TOLERANT SILICON TRANSISTOR [J].
LAURTIZEN, PO ;
FITZGERALD, DJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1964, NS11 (05) :39-&
[18]   IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].
LEE, CA ;
KLEIMACK, JJ ;
BATDORF, RL ;
WIEGMANN, W ;
LOGAN, RA .
PHYSICAL REVIEW, 1964, 134 (3A) :A761-+
[19]  
MESSENGER GC, 1967 IEEE ANN C NUCL
[20]   CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J].
MOLL, JL ;
VANOVERSTRAETEN, R .
SOLID-STATE ELECTRONICS, 1963, 6 (02) :147-157