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CALCULATION OF DOPING PROFILES FROM C(V) MEASUREMENTS ON 2-SIDED JUNCTIONS

被引：13
作者：
DEMAN, HJJ
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1970年 / ED17卷 / 12期
关键词：
D O I：
10.1109/T-ED.1970.17131
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1087 / &
相关论文
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