INSTRUMENT FOR RAPID DETERMINATION OF SEMICONDUCTOR IMPURITY PROFILES

被引：40

作者：

BAXANDALL, PJ

COLLIVER, DJ

FRAY, AF

机构：

来源：

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 1971年 / 4卷 / 03期

关键词：

D O I：

10.1088/0022-3735/4/3/014

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：213 / +

页数：1

共 11 条

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[8]

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[10] EFFECT OF SURFACE TREATMENT ON GALLIUM ARSENIDE SCHOTTKY BARRIER DIODES [J].

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