EFFECT OF SURFACE TREATMENT ON GALLIUM ARSENIDE SCHOTTKY BARRIER DIODES

被引：21

作者：

SMITH, BL

机构：

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 04期

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D O I：

10.1016/0038-1101(68)90034-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：502 / &

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