INFLUENCE OF DOPING FLUCTUATIONS ON LIMITED SPACE-CHARGE ACCUMULATION IN N-TYPE GALLIUM ARSENIDE

被引：3

作者：

ACKET, GA

机构：

[1] Philips Research Laboratories, N.V. Philips' Gloeilampenfabrieken, Eindhoven

来源：

PHYSICS LETTERS A | 1968年 / A 27卷 / 05期

关键词：

D O I：

10.1016/0375-9601(68)90710-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Experiments concerning the disappearance of domain-oscillations in n-GaAs produced by an externally applied microwave field are reported. The results yield information about the influence of doping fluctuations on limited space-charge accumulation in this material. © 1968.

引用

页码：293 / &