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EFFECT OF DOMAIN AND CIRCUIT PROPERTIES ON OSCILLATIONS IN GAAS
被引:58
作者
:
GUNN, JB
论文数:
0
引用数:
0
h-index:
0
GUNN, JB
机构
:
来源
:
IBM JOURNAL OF RESEARCH AND DEVELOPMENT
|
1966年
/ 10卷
/ 04期
关键词
:
D O I
:
10.1147/rd.104.0310
中图分类号
:
TP3 [计算技术、计算机技术];
学科分类号
:
0812 ;
摘要
:
引用
收藏
页码:310 / +
页数:1
相关论文
共 5 条
[1]
BRASLAU N, PRIVATE COMMUNICATIO
[2]
INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS
GUNN, JB
论文数:
0
引用数:
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GUNN, JB
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(02)
: 141
-
&
[3]
GUNN JB, 1965, 1964 P S PLASM EFF S, P199
[4]
GUNN JB, 1966, IBM J, V300
[5]
SOME PROPERTIES OF MOVING HIGH-FIELD DOMAIN IN GUNN EFFECT DEVICES
HEEKS, JS
论文数:
0
引用数:
0
h-index:
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HEEKS, JS
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
: 68
-
+
←
1
→
共 5 条
[1]
BRASLAU N, PRIVATE COMMUNICATIO
[2]
INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS
GUNN, JB
论文数:
0
引用数:
0
h-index:
0
GUNN, JB
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(02)
: 141
-
&
[3]
GUNN JB, 1965, 1964 P S PLASM EFF S, P199
[4]
GUNN JB, 1966, IBM J, V300
[5]
SOME PROPERTIES OF MOVING HIGH-FIELD DOMAIN IN GUNN EFFECT DEVICES
HEEKS, JS
论文数:
0
引用数:
0
h-index:
0
HEEKS, JS
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
: 68
-
+
←
1
→