ROOM-TEMPERATURE INTERDIFFUSION IN EVAPORATED AU-SN FILMS

被引：18

作者：

BUENE, L

JACOBSEN, ST

机构：

来源：

PHYSICA SCRIPTA | 1978年 / 18卷 / 06期

关键词：

D O I：

10.1088/0031-8949/18/6/010

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：397 / 399

页数：3

共 10 条

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[2] INTERDIFFUSION AND PHASE FORMATION AT ROOM-TEMPERATURE IN EVAPORATED GOLD-TIN FILMS [J].

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[3]

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[5] ANNEALING BEHAVIOR OF GE-AU-NI, GE-AU-PT AND GE-AU-PD TRI-LAYERED FILMS [J].

FINSTAD, TG .

THIN SOLID FILMS, 1977, 47 (03) :279-290

[6]

Knight S., 1969, Ohmic contacts to semiconductors, P102

[7] METALLIC CONTACTS FOR GALLIUM ARSENIDE [J].

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[8] THIN-FILM INTERDIFFUSION .1. AU-PD, PD-AU, TI-PD, TI-AU, TI-PD-AU, AND TI-AU-PD [J].

POATE, JM ;

TURNER, PA ;

DEBONTE, WJ ;

YAHALOM, J .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) :4275-4283

[9] INVESTIGATION OF AU-GE-NI SYSTEM USED FOR ALLOYED CONTACTS TO GAAS [J].

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SOLID-STATE ELECTRONICS, 1977, 20 (05) :433-&

[10]

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