TUNNELING CURRENTS AND E-K RELATION

被引：17

作者：

KURTIN, S

MCGILL, TC

MEAD, CA

机构：

来源：

PHYSICAL REVIEW LETTERS | 1970年 / 25卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.25.756

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：756 / &

共 21 条

[11] SURFACE BARRIERS ON LAYER SEMICONDUCTORS - GASE [J].

KURTIN, S ;

MEAD, CA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (10) :1865-&

[12]

KURTIN S, TO BE PUBLISHED

[13] EXPERIMENTAL DETERMINATION OF E-K RELATIONSHIP IN ELECTRON TUNNELING [J].

LEWICKI, G ;

MEAD, CA .

PHYSICAL REVIEW LETTERS, 1966, 16 (21) :939-&

[14]

MCGILL TC, TO BE PUBLISHED

[15]

MCGILL TC, 1969, THESIS CALIFORNIA I

[16]

Mead C. A., 1969, Tunneling phenomena in solids, P127

[17] CURRENT FLOW IN VERY THIN FILMS OF A2O33 AND BEO [J].

MEYERHOFFER, D ;

OCHS, SA .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) :2535-&

[18] EXPERIMENTAL ENERGY-MOMENTUM RELATIONSHIP DETERMINATION USING SCHOTTKY BARRIERS [J].

PADOVANI, FA ;

STRATTON, R .

PHYSICAL REVIEW LETTERS, 1966, 16 (26) :1202-&

[19] TUNNELING IN CDTE SCHOTTKY BARRIERS [J].

PARKER, GH ;

MEAD, CA .

PHYSICAL REVIEW, 1969, 184 (03) :780-&

[20] EFFECT OF TRAPPING STATES ON TUNNELING IN METAL-SEMICONDUCTOR JUNCTIONS [J].

PARKER, GH ;

MEAD, CA .

APPLIED PHYSICS LETTERS, 1969, 14 (01) :21-&

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