ANOMALOUS OFF-CURRENT MECHANISMS IN N-CHANNEL POLY-SI THIN-FILM TRANSISTORS

被引：36

作者：

MIGLIORATO, P ^{[1
]}

REITA, C ^{[1
]}

TALLARIDA, G ^{[1
]}

QUINN, M ^{[1
]}

FORTUNATO, G ^{[1
]}

机构：

[1] CNR,IESS,I-00156 ROME,ITALY

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 12期

关键词：

D O I：

10.1016/0038-1101(95)00027-Q

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The anomalous off-current (I-off) in polysilicon thin film transistors (polysilicon TFTs) is one of the major problems preventing a wide use of these devices in active matrix liquid crystal displays. While previous investigations have focused on the temperature range above 300 K, in this study we have investigated the behaviour of I-off over a wide range of temperatures, namely 180-400 K. The data have been analysed by combining 2D simulations and existing analytic models. By this approach we have identified a pure trap-to-band tunnelling mechanism in polysilicon TFTs and deduced, by a simple procedure, the physical constants. The temperature and bias dependence of the off-current has been explained quantitatively in terms of phonon-assisted tunnelling. The number of generating centres, the dominant trap energy and the thermal capture cross section are deduced from this analysis.

引用

页码：2075 / 2079

页数：5

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