SPLITTING OF DONOR LEVELS IN MULTI-VALLEY SEMICONDUCTORS IN THE PRESENCE OF EXTERNAL FIELDS

被引：11

作者：

RAMDAS, AK

LEE, PM

FISHER, P

机构：

来源：

PHYSICS LETTERS | 1963年 / 7卷 / 02期

关键词：

D O I：

10.1016/0031-9163(63)90621-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：99 / 101

页数：3

共 9 条

[1] Cross P. C, 1955, MOL VIBRATIONS
[2] ZEEMAN SPLITTING OF DONOR STATES IN GERMANIUM
HAERING, RR
[J]. CANADIAN JOURNAL OF PHYSICS, 1958, 36 (09) : 1161 - 1167
[3] THEORY OF DONOR STATES IN SILICON
KOHN, W
LUTTINGER, JM
[J]. PHYSICAL REVIEW, 1955, 98 (04): : 915 - 922
[4] LAX B, 1958, B AM PHYS SOC, V3, P31
[5] MURNAGHAN FD, 1938, THEORY GROUP REPRESE, P100
[6] THEORY OF TRANSPORT EFFECTS IN SEMICONDUCTORS - THERMOELECTRICITY
PRICE, PJ
[J]. PHYSICAL REVIEW, 1956, 104 (05): : 1223 - 1239
[7] WIGNER EP, 1959, GROUP THEORY, P198
[8] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .3. INVESTIGATION OF EXCITED STATES BY APPLICATION OF UNIAXIAL STRESS AND THEIR IMPORTANCE IN RELAXATION PROCESSES
WILSON, DK
FEHER, G
[J]. PHYSICAL REVIEW, 1961, 124 (04): : 1068 - &
[9] ZEEMAN EFFECT OF IMPURITY LEVELS IN SILICON
ZWERDLING, S
BUTTON, KJ
LAX, B
[J]. PHYSICAL REVIEW, 1960, 118 (04): : 975 - 986