HIGH-TEMPERATURE ETCHING OF PZT/PT/TIN STRUCTURE BY HIGH-DENSITY ECR PLASMA

被引：80

作者：

YOKOYAMA, S ^{[1
]}

ITO, Y ^{[1
]}

ISHIHARA, K ^{[1
]}

HAMADA, K ^{[1
]}

OHNISHI, S ^{[1
]}

KUDO, J ^{[1
]}

SAKIYAMA, K ^{[1
]}

机构：

[1] SHARP CO LTD,VERY LARGE SCALE INTEGRAT DEV LABS,TENRI,NARA 632,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

PZT; PT; DRY ETCHING; HIGH TEMPERATURE; ECR PLASMA;

D O I：

10.1143/JJAP.34.767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Submicron patterning technologies for the PZT/Pt/Ti/TiN/Ti structure with a spin on glass (SOG) mask were demonstrated using a high-density ECR plasma and a high substrate temperature above 300 degrees C. A 30%-Cl-2/Ar gas was used to etch a lead zirconate titanate (PZT) film. No deposits remained, which resulted in an etched profile of more than 80 degrees. A 40%-O-2/Cl-2 gas was used to etch a Pt film. The etching was completely stopped at the Ti layer. 30-nm-thick deposits remained on the sidewall. They were removed after dipping in hydrochloric acid. The etched profile of a Pt film was more than 80 degrees. The Ti/TiN/Ti layer was etched with pure Cl-2 gas. The size shift from the SOG mask was less than 0.1 mu m. Interdiffusion between SOG and PZT was not detected by transmission electron microscopy and energy dispersive x-ray spectroscopy (TEM-EDX) analysis.

引用

页码：767 / 770

页数：4

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