PULSED ELECTRON-BEAM FOR SILICON ANNEALING

被引：13

作者：

LEGGIERI, G ^{[1
]}

LUCHES, A ^{[1
]}

NASSISI, V ^{[1
]}

PERRONE, A ^{[1
]}

PERRONE, MR ^{[1
]}

MAJNI, G ^{[1
]}

NAVA, F ^{[1
]}

机构：

[1] UNIV MODENA, IST FIS, I-41100 MODENA, ITALY

来源：

VACUUM | 1982年 / 32卷 / 01期

关键词：

D O I：

10.1016/S0042-207X(82)80188-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9 / 10

页数：2

共 5 条

[1] DYNAMICS OF LASER-INDUCED FORMATION OF PALLADIUM SILICIDE [J].

ALLMEN, MV ;

WITTMER, M .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :68-70

[2] COMPOUNDS IN THE PD-SI AND PT-SI SYSTEM OBTAINED BY ELECTRON-BOMBARDMENT AND POST-THERMAL ANNEALING [J].

MAJNI, G ;

NAVA, F ;

OTTAVIANI, G ;

DANNA, E ;

LEGGIERI, G ;

LUCHES, A ;

CELOTTI, G .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4055-4061

[3]

Nation J. A., 1979, Particle Accelerators, V10, P1

[4] LIMITING CURRENTS IN UNNEUTRALIZED RELATIVISTIC ELECTRON-BEAMS [J].

NATION, JA ;

READ, M .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :426-428

[5] LASER ANNEALING OF BORON-IMPLANTED SILICON [J].

YOUNG, RT ;

WHITE, CW ;

CLARK, GJ ;

NARAYAN, J ;

CHRISTIE, WH ;

MURAKAMI, M ;

KING, PW ;

KRAMER, SD .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :139-141

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