GRAIN-BOUNDARY RECOMBINATION - THEORY AND EXPERIMENT IN SILICON

[1] BARRIER-LIMITED CONDUCTIVITY IN THIN-FILM TRANSISTORS [J]. THIN SOLID FILMS, 1976, 37 (01) : 127 - 135

[2] ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 397 - 402

[3] POLYCRYSTALLINE SILICON SOLAR CELLS ON LOW-COST FOREIGN SUBSTRATES [J]. SOLAR ENERGY, 1975, 17 (04) : 229 - 235

[4] CHU TL, 1976, MAY P NAT WORKSH LOW, P408

[5] FAUGHNAN BW, 1980, SERIPR082763 TECH PR, P10

[6] THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 692 - 700

[7] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[8] THEORY OF CONDUCTION IN ZNO VARISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2799 - 2812

[9] MANY A, 1965, SEMICONDUCTOR SURFAC, P83

[10] MUELLER RK, 1961, J APPL PHYS, V32, P640, DOI 10.1063/1.1736063

[1] BARRIER-LIMITED CONDUCTIVITY IN THIN-FILM TRANSISTORS [J]. THIN SOLID FILMS, 1976, 37 (01) : 127 - 135

[2] ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 397 - 402

[3] POLYCRYSTALLINE SILICON SOLAR CELLS ON LOW-COST FOREIGN SUBSTRATES [J]. SOLAR ENERGY, 1975, 17 (04) : 229 - 235

[4] CHU TL, 1976, MAY P NAT WORKSH LOW, P408

[5] FAUGHNAN BW, 1980, SERIPR082763 TECH PR, P10

[6] THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 692 - 700

[7] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[8] THEORY OF CONDUCTION IN ZNO VARISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2799 - 2812

[9] MANY A, 1965, SEMICONDUCTOR SURFAC, P83

[10] MUELLER RK, 1961, J APPL PHYS, V32, P640, DOI 10.1063/1.1736063