THE REGROWN-DIFFUSED TRANSISTOR

[1] PREPARATION OF LARGE-AREA P-N JUNCTIONS IN SILICON BY SURFACE MELTING [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (11) : 1242 - 1245

[2] KENDALL JT, 1958, ELECTRON RADIO ENG, V35, P202

[3] PHILLIPS AB, 1957, IRE NATIONAL CONVE 3, V5, P3

[4] 1958, Patent No. 35903

[1] PREPARATION OF LARGE-AREA P-N JUNCTIONS IN SILICON BY SURFACE MELTING [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (11) : 1242 - 1245

[2] KENDALL JT, 1958, ELECTRON RADIO ENG, V35, P202

[3] PHILLIPS AB, 1957, IRE NATIONAL CONVE 3, V5, P3

[4] 1958, Patent No. 35903