ELECTRONIC STATES AND ATOMIC-STRUCTURE AT THE PD2SI-SI INTERFACE

[1] ABBATI I, 1980, 4TH P ICSS 3RD ECSS, P1023

[2] BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581

[3] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[4] FOELL H, UNPUBLISHED

[5] REACTIVE SCHOTTKY-BARRIER FORMATION - THE PD-SI INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 916 - 919

[6] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (24) : 1836 - 1839

[7] XPS STUDY OF THE CHEMICAL-STRUCTURE OF THE NICKEL-SILICON INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 924 - 929

[8] CHEMICAL BONDING AND ELECTRONIC-STRUCTURE OF PD2SI [J]. PHYSICAL REVIEW B, 1980, 22 (10): : 4784 - 4790

[9] CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1120 - 1124

[10] CALCULATION OF THE ELECTRONIC-STRUCTURE OF THE AMORPHOUS PD80SI20 SYSTEM [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (13): : 2531 - 2541

[1] ABBATI I, 1980, 4TH P ICSS 3RD ECSS, P1023

[2] BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581

[3] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[4] FOELL H, UNPUBLISHED

[5] REACTIVE SCHOTTKY-BARRIER FORMATION - THE PD-SI INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 916 - 919

[6] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (24) : 1836 - 1839

[7] XPS STUDY OF THE CHEMICAL-STRUCTURE OF THE NICKEL-SILICON INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 924 - 929

[8] CHEMICAL BONDING AND ELECTRONIC-STRUCTURE OF PD2SI [J]. PHYSICAL REVIEW B, 1980, 22 (10): : 4784 - 4790

[9] CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1120 - 1124

[10] CALCULATION OF THE ELECTRONIC-STRUCTURE OF THE AMORPHOUS PD80SI20 SYSTEM [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (13): : 2531 - 2541