AVALANCHE BREAKDOWN VOLTAGE OF GAAS P+-N-N+ DIODE STRUCTURES

被引：6

作者：

KUNO, HJ

COLLARD, JR

GOBAT, AR

机构：

[1] RCA, Microwave Applied Research Laboratory, David Sarnoff Research Center, Princeton

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 11期

关键词：

D O I：

10.1063/1.1652679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ionization rates of GaAs are first empirically determined from breakdown voltage measurements of p+-n junctions with thick n layers. The theoretical analysis is then extended to p+-n-n+ structures in which space-charge punch-through occurs before breakdown takes place. The avalanche breakdown voltages of GaAs p+-n-n+ diode structures are calculated as a function of the n layer thickness W as well as the doping density n. Comparison of the theoretical calculation with experimental data shows very good agreement. © 1969 The American Institute of Physics.

引用

页码：343 / &