THE VOLTAGE BREAKDOWN OF GAAS ABRUPT JUNCTIONS

[1] KRESSEL H, 1962, P IRE, V50, P2493

[2] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[3] AVALANCHE BREAKDOWN IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1234 - 1241

[4] IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1246 - 1249

[5] SIGNIFICANCE OF CRYSTALLOGRAPHIC POLARITY IN FABRICATION OF JUNCTIONS IN INSB [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) : 1826 - &

[6] MLAVSKY AI, 1962, J ELECTROCHEM SOC, V109, pC202

[7] MLAVSKY AI, 1961, J ELECTROCHEM SOC, V108, pC263

[1] KRESSEL H, 1962, P IRE, V50, P2493

[2] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[3] AVALANCHE BREAKDOWN IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1234 - 1241

[4] IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1246 - 1249

[5] SIGNIFICANCE OF CRYSTALLOGRAPHIC POLARITY IN FABRICATION OF JUNCTIONS IN INSB [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) : 1826 - &

[6] MLAVSKY AI, 1962, J ELECTROCHEM SOC, V109, pC202

[7] MLAVSKY AI, 1961, J ELECTROCHEM SOC, V108, pC263