SOLUTION GROWTH OF HIGHLY PERFECT CRYSTALS OF ZINC TELLURIDE

[1] MOBILITY OF HOLES AND INTERACTION BETWEEN DEFECTS IN ZNTE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) : 4421 - &

[2] PURIFICATION OF II-VI-COMPOUNDS BY SOLVENT EXTRACTION [J]. APPLIED PHYSICS LETTERS, 1962, 1 (03) : 53 - 54

[3] THE PHASE DIAGRAM OF ZINC TELLURIDE [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (08) : 217 - 218

[4] GROWTH OF SEMICONDUCTOR CRYSTALS FROM SOLUTION USING TWIN-PLANE REENTRANT-EDGE MECHANISM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) : 1407 - &

[5] PREPARATION AND PROPERTIES OF NORMAL-TYPE ZNTE [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (06) : 157 - 159

[6] KULWICKI BM, 1963, THESIS U MICH SCH EN, P74

[7] LYNCH RT, 1968, J CRYST GROWTH, V2, P106

[8] SOLUBILITIES OF SOME 2-6 COMPOUNDS IN BISMUTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (06) : 623 - +

[9] SHIOZAWA LR, 1962, AD281718

[10] THOMAS DG, 1966, PHYS REV LETT, V17, P6

[1] MOBILITY OF HOLES AND INTERACTION BETWEEN DEFECTS IN ZNTE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) : 4421 - &

[2] PURIFICATION OF II-VI-COMPOUNDS BY SOLVENT EXTRACTION [J]. APPLIED PHYSICS LETTERS, 1962, 1 (03) : 53 - 54

[3] THE PHASE DIAGRAM OF ZINC TELLURIDE [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (08) : 217 - 218

[4] GROWTH OF SEMICONDUCTOR CRYSTALS FROM SOLUTION USING TWIN-PLANE REENTRANT-EDGE MECHANISM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) : 1407 - &

[5] PREPARATION AND PROPERTIES OF NORMAL-TYPE ZNTE [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (06) : 157 - 159

[6] KULWICKI BM, 1963, THESIS U MICH SCH EN, P74

[7] LYNCH RT, 1968, J CRYST GROWTH, V2, P106

[8] SOLUBILITIES OF SOME 2-6 COMPOUNDS IN BISMUTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (06) : 623 - +

[9] SHIOZAWA LR, 1962, AD281718

[10] THOMAS DG, 1966, PHYS REV LETT, V17, P6